GaN microdisk light emitting diodes

被引：216

作者：

Jin, SX ^{[1
]}

Li, J ^{[1
]}

Li, JZ ^{[1
]}

Lin, JY ^{[1
]}

Jiang, HX ^{[1
]}

机构：

[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 05期

关键词：

D O I：

10.1063/1.125841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Microdisk light-emitting diodes (mu-LEDs) with diameter of about 12 mu m have been fabricated from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled plasma dry etching have been employed to fabricate these mu-LED devices. Device characteristics, such as the current-voltage characteristics, light output power, and electroluminescence (EL) spectra have been measured and compared with those of conventional broad-area LEDs. Our results showed that, for an identical area, the quantum efficiencies of mu-LED are enhanced over the conventional broad-area LEDs due to an enhanced current density and possibly microsize effects. The implications of our results on the design of future UV/blue microoptoelectronic devices are discussed. (C) 2000 American Institute of Physics. [S0003-6951(00)03805-5].

引用

页码：631 / 633

页数：3

共 9 条

[1] Laser action in GaN pyramids grown on, (111) silicon by selective lateral overgrowth [J].