Effects of oxygen and substrate temperature on properties of amorphous carbon films fabricated by plasma-assisted pulsed laser deposition method

被引:25
作者
Ono, T
Suda, Y
Akazawa, M
Sakai, Y
Suzuki, K
机构
[1] Hokkaido Univ, Grad Sch Engn, Sapporo, Hokkaido 0608628, Japan
[2] Nihon Univ, Coll Sci & Technol, Dept Elect Engn, Tokyo 1018308, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 7A期
关键词
amorphous carbon (a-C); pulsed laser deposition (PLD); oxygen plasma; substrate temperature; XPS; SEM; Raman spectroscopy; graphite; diamond;
D O I
10.1143/JJAP.41.4651
中图分类号
O59 [应用物理学];
学科分类号
摘要
Amorphous carbon (a-C) thin films were deposited on S(111) substrates by an oxygen RF plasma-assisted pulsed laser deposition (PLD) method at an oxygen pressure of 53 mPa, as well as in vacuum and oxygen gas ambient at 53 mPa for comparison, at substrate temperatures (T-sub) between room temperature and 480degreesC. An X-ray photoelectron spectroscopy (XPS) analysis showed that the highest sp(3) content of the film was 58% in oxygen plasma PLD at T-sub = 410degreesC. Under this condition, the film surface morphology was shown to be quite smooth with a roughness of about 5 mm, by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Effects of the oxygen, plasma and the substrate temperature on the film properties were examined.
引用
收藏
页码:4651 / 4654
页数:4
相关论文
共 15 条
[1]   Characterization of amorphous carbon thin films [J].
Capano, MA ;
McDevitt, NT ;
Singh, RK ;
Qian, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (02) :431-435
[2]   Interpretation of Raman spectra of disordered and amorphous carbon [J].
Ferrari, AC ;
Robertson, J .
PHYSICAL REVIEW B, 2000, 61 (20) :14095-14107
[3]   Structural properties of carbon films deposited by pulsed ArF laser ablation:: effects of substrate temperature, bias and H2 pressure [J].
Jayatissa, AH ;
Sato, F ;
Saito, N ;
Ohnishi, H ;
Takizawa, K ;
Nakanishi, Y ;
Yamaguchi, T .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 55 (1-2) :143-152
[4]   EFFECT OF OXYGEN IN DIAMOND DEPOSITION AT LOW SUBSTRATE TEMPERATURES [J].
LIOU, Y ;
WEIMER, R ;
KNIGHT, D ;
MESSIER, R .
APPLIED PHYSICS LETTERS, 1990, 56 (05) :437-439
[5]   STRUCTURAL INVESTIGATION OF XENON-ION-BEAM-IRRADIATED GLASSY-CARBON [J].
MCCULLOCH, DG ;
PRAWER, S ;
HOFFMAN, A .
PHYSICAL REVIEW B, 1994, 50 (09) :5905-5917
[6]   PULSED-LASER DEPOSITION OF CARBON-FILMS - DEPENDENCE OF FILM PROPERTIES ON LASER WAVELENGTH [J].
MURRAY, PT ;
PEELER, DT .
JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (09) :855-859
[7]   LASER DEPOSITION OF DIAMOND-LIKE CARBON-FILMS AT HIGH INTENSITIES [J].
QIAN, F ;
SINGH, RK ;
DUTTA, SK ;
PRONKO, PP .
APPLIED PHYSICS LETTERS, 1995, 67 (21) :3120-3122
[8]   Pulsed laser deposition and modification of diamondlike carbon films [J].
Reisse, G ;
Keiper, B ;
Weissmantel, S ;
Falke, U .
APPLIED SURFACE SCIENCE, 1998, 127 :500-506
[9]   DEPOSITION MECHANISMS FOR PROMOTING SP(3) BONDING IN DIAMOND-LIKE CARBON [J].
ROBERTSON, J .
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :984-989
[10]   Deposition of fine carbon particles using pulsed ArF laser ablation assisted by inductively coupled plasma [J].
Suda, Y ;
Nishimura, T ;
Ono, T ;
Akazawa, M ;
Sakai, Y ;
Homma, N .
THIN SOLID FILMS, 2000, 374 (02) :287-290