Photo-current spectroscopy of modulation doped InAs self-assembled quantum dots

被引：3

作者：

Hawrylak, R ^{[1
]}

Korkusinski, M ^{[1
]}

Fafard, S ^{[1
]}

Dudek, R ^{[1
]}

Liu, HC ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期

关键词：

quantum dots; FIR absorption; detectors;

D O I：

10.1016/S1386-9477(01)00530-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present results of calculations and experiments on photo-current spectroscope of modulation doped InAs self-assembled quantum dots. We derive an expression for the transition probability describing the dependence of the photo-current on the parameters of the dot. the number of carriers. and the polarization and energy of incident photons, The results of preliminary calculations are compared with experiments, which clearly show the dependence on photon energy and polarization. (C) 2002 Published by Elsevier Science B.V.

引用

页码：246 / 250

页数：5

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