Charged defects in highly emissive organic wide-band-gap semiconductors

被引：38

作者：

List, EJW

Kim, CH

Shinar, J

Pogantsch, A

Leising, G

Graupner, W

机构：

[1] Graz Tech Univ, Inst Festkorperphys, A-8010 Graz, Austria

[2] Iowa State Univ, Ames Lab, US DOE, Ames, IA 50011 USA

[3] Iowa State Univ, Dept Phys & Astron, Ames, IA 50011 USA

[4] Virginia Tech, Dept Phys, Blacksburg, VA 24060 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 15期

关键词：

D O I：

10.1063/1.126262

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A combined photoluminescence (PL) -detected magnetic-resonance (PLDMR) and thermally stimulated current (TSC) study of defects in wide-band-gap para-phenylene-type semiconductors is described. As TSC probes the density of mobile charge carriers after detrapping and PLDMR reveals the influence of trapped charges on the PL, their combination yields the concentration of traps, their energetic position, and their contribution to PL quenching. The reported trap densities, which are 2 x 10(16) for the polymer and 1 x 10(14) cm(-3), for the oligomer, are the lowest reported for para-phenylene-type materials. (C) 2000 American Institute of Physics. [S0003-6951(00)03615-9].

引用

页码：2083 / 2085

页数：3

共 15 条

[1] Excited-state dynamics of poly(para-phenylene)-type ladder polymers at high photoexcitation density [J].