The interface structure in directly bonded silicon crystals studied by synchrotron X-ray diffraction

被引：5

作者：

Nielsen, M

Feidenhans'l, R ^{[1
]}

Howes, PB

Vedde, J

Rasmussen, K

Benamara, M

Grey, F

机构：

[1] Riso Natl Lab, Condensed Matter Phys & Chem Dept, DK-4000 Roskilde, Denmark

[2] TOPSOIL Semicond Mat AS, DK-3600 Frederikssund, Denmark

[3] Tech Univ Denmark, Mikroelekt Ctr, DK-2800 Lyngby, Denmark

来源：

SURFACE SCIENCE | 1999年 / 442卷 / 01期

关键词：

grain boundaries; semiconductor-semiconductor interfaces; X-ray scattering; diffraction; and reflection;

D O I：

10.1016/S0039-6028(99)00942-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Fusion-bonded silicon wafers exhibit a superstructure at their common interface due to the spatial beating of the two crystal lattices. The superstructure consists of a network of screw dislocations with a period determined by the twist angle theta. By synchrotron X-ray diffraction, the periodic elastic modulation in the two crystals resulting from the dislocation network has been measured. The characteristic thickness of the modulated region is found to be inversely proportional to theta, reaching over 160 Angstrom for theta = 0.4 degrees. This behavior is reproduced in numerical simulations of the elastic modulation. (C) 1999 Elsevier Science B.V. All rights reserved.

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页码：L989 / L994

页数：6

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