Image acceleration of highly charged ions on metal, semiconductor, and insulator surfaces

被引:18
作者
Briand, JP
Thuriez, S
Giardino, G
Borsoni, G
LeRoux, V
Froment, M
Eddrief, M
deVilleneuve, C
DEtatBan, B
Sebenne, C
机构
[1] UNIV PARIS 06, CNRS, UPR 0015, LAB PHYS LIQUIDES & ELECTROCHIM, F-75252 PARIS 05, FRANCE
[2] UNIV PARIS 06, CNRS, ERS 113, PHYS SOLIDES LAB, F-75252 PARIS 05, FRANCE
来源
PHYSICAL REVIEW A | 1997年 / 55卷 / 04期
关键词
EMISSION; SLOW;
D O I
10.1103/PhysRevA.55.R2523
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Very slow, highly charged ions impinging on metal surfaces are known to be accelerated by their image and to drop irremediably on the surfaces which they touch or slightly penetrate. We present experiments which demonstrate that above insulators or semiconductors, at normal incidence, the ions are backscattered at a certain distance from the surface and do not touch it. This finding is explained by the transient buildup of positive charges due to the removal of valence electrons, which overcome the acceleration of the ion by its own image. This effect is found to cancel out at grazing incidence.
引用
收藏
页码:R2523 / R2526
页数:4
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