Single-photon detection beyond 1 mu m: Performance of commercially available InGaAs/InP detectors

被引:155
作者
Lacaita, A
Zappa, F
Cova, S
Lovati, P
机构
[1] Dipartimento di Elettronica e Informazione, Politecnico di Milano, Piazza Leonardo Da Vinci, Milano
来源
APPLIED OPTICS | 1996年 / 35卷 / 16期
关键词
photon counting; photon timing; avalanche photodiodes; single-photon detection; InGaAs/InP detectors;
D O I
10.1364/AO.35.002986
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Commercially available InGaAs/InP avalanche photodiodes, designed for optical receivers and range finders, can be operated biased above the breakdown voltage, achieving single-photon sensitivity. We describe in detail how to select the device for photon-counting applications among commercial samples. Because of the high dark-counting rate the detector must be cooled to below 100 K and operated in a gated mode. We achieved a noise equivalent power of 3 x 10(-16) W Hz(1/2) to a 1.55-mu m wavelength and a time resolution well below 1 ns with a best value of 200-ps FWHM. Finally we compare these figures with the performance of state-of-the-art detectors in the near IR, and we highlight the potentials of properly designed InGaAs/InP avalanche photodiodes in single-photon detection. (C) 1996 Optical Society of America
引用
收藏
页码:2986 / 2996
页数:11
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