Influence of energy level alignment on tunneling between coupled quantum dots

被引：43

作者：

Dixon, D

Kouwenhoven, LP

McEuen, PL

Nagamune, Y

Motohisa, J

Sakaki, H

机构：

[1] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

[2] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.53.12625

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have measured the nonlinear transport properties of two GaAs/AlxGa1-xAs quantum dots connected in series. At high source-drain bias the Coulomb oscillations develop a sharp overstructure. The behavior of this overstructure is studied as a function of the electrostatic potentials of the dots. The structure is shown to arise from the modulation of interdot tunneling that occurs as the quantum levels in the two dots are aligned and dealigned.

引用

页码：12625 / 12628

页数：4

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