CIS film growth by metallic ink coating and selenization

被引：79

作者：

Norsworthy, G

Leidholm, CR

Halani, A

Kapur, VK

Roe, R

Basol, BM

Matson, R

机构：

[1] Int Solar Elect Technol Inc, ISET, Inglewood, CA 90301 USA

[2] NREL, Golden, CO 80401 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2000年 / 60卷 / 02期

关键词：

photovoltaics; thin-film; solar cells;

D O I：

10.1016/S0927-0248(99)00075-6

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A novel technique was demonstrated for the growth of CuInSe2 (CIS) thin films. The technique used an ink formulation containing sub-micron size particles of Cu-In alloys. A metallic precursor layer was first formed by coating this ink onto the substrate by spraying. The precursor film was then made to react with Se to form the CIS compound. The morphology of the CIS layers depended on the initial composition of the Cu-In particles as well as the post-deposition treatments. Solar cells were fabricated on CIS absorber layers prepared by this low-cost ink-coating approach and devices with a conversion efficiency of over 10.5% were demonstrated. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：127 / 134

页数：8

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