Determination of the d31 piezoelectric coefficient of PbZrxTi1-xO3 thin films using multilayer buckled micromembranes

被引：29

作者：

Ayela, C. ^{[1
]}

Nicu, L.

Soyer, C.

Cattan, E.

Bergaud, C.

机构：

[1] UPR 8001, Lab Anal & Architecture Syst, F-31077 Toulouse, France

[2] Inst Elect Microelect & Nanotechnol, UMR 8520, F-59046 Lille, France

[3] Lab Integrated Micromechatron Syst, UMR 2820, Tokyo 1538505, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 05期

关键词：

D O I：

10.1063/1.2338139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The aim of this paper consists in the determination of the piezoelectric transverse coefficient d(31) of PbZrxTi1-xO3 (PZT) thin films integrated in dedicated multilayer silicon-based micromembranes exhibiting an initial buckled profile. An analytical model specific to this configuration was built and used for the calculation of d(31) starting with the static profiles of the microfabricated devices determined by means of a double-beam interferometer. The influence of dc voltage and buckling effects on the d(31) piezoelectric coefficient at the microscale were investigated, and high values were obtained, from 30 to 75 pm/V, within a hysteresyslike cycle. These results demonstrated the good electrical behavior of PZT thin films at the microscale with a low influence of buckling effects and determined optimal operation conditions for high values of d(31). (c) 2006 American Institute of Physics.

引用

页数：9

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