Large effects due to electron-phonon-impurity interference in the resistivity of Pt/C-Ga composite nanowires

被引：33

作者：

Lin, JF ^{[1
]}

Bird, JP

Rotkina, L

Sergeev, A

Mitin, V

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[3] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA

[4] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 19期

关键词：

D O I：

10.1063/1.1745108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature-dependent resistivity of highly disordered Pt/C-Ga composite nanowires is shown to be well described by the interference of electron-phonon scattering and elastic electron scattering from boundaries and defects. The strongly disordered nature of these wires, combined with a high value of their Debye temperature, are responsible for the pronounced nature of the interference effects in their resistivity. (C) 2004 American Institute of Physics.

引用

页码：3828 / 3830

页数：3

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