Mg-modified surface kinetics of the GaN growth by molecular beam epitaxy

被引：15

作者：

Daudin, B

Mula, G

Peyla, P

机构：

[1] SPMM, Dept Rech Fondamentale Mat Condensee, CEA, F-38054 Grenoble 9, France

[2] Cittadella Univ, Dipartimento Fis, I-09042 Cagliari, Italy

[3] INFM, I-09042 Cagliari, Italy

[4] Univ Grenoble 1, CNRS, Lab Phys & Modelisat Milieux Condenses, F-38042 Grenoble 9, France

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.61.10330

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of Mg on the growth kinetics of GaN deposited by plasma-assisted molecular-beam epitaxy has been studied. It has been found that surface diffusion and/or the residence time of both N and Ga were drastically influenced by the presence of Mg on the surface. This leads to an abrupt phase transition from a low-mobility state to a high mobility state for the Ga atoms onto the surface when increasing the Ga/N flux ratio above a critical value. A Ga droplet density has been evaluated by a simple nucleation model, and found to be in agreement with experimental observations.

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页码：10330 / 10335

页数：6

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