Size dependent optical band gap of ternary I-III-VI2 semiconductor nanocrystals

被引：180

作者：

Omata, Takahisa ^{[1
]}

Nose, Katsuhiro ^{[1
]}

Otsuka-Yao-Matsuo, Shinya ^{[1
]}

机构：

[1] Osaka Univ, Div Mat & Mfg Sci, Grad Sch Engn, Suita, Osaka 5650871, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 07期

基金：

日本学术振兴会;

关键词：

EXCITED ELECTRONIC STATE; SINGLE-SOURCE PRECURSORS; QUANTUM-DOT; CDSE NANOCRYSTALS; SOLAR-CELLS; NANOPARTICLES; CRYSTALLITES; SILICON; CUINS2; ROUTE;

D O I：

10.1063/1.3103768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The size dependent optical band gap of the less-toxic ternary I-III-VI2 chalcopyrite-type semiconductor quantum dots (QDs), CuInS2, CuInSe2, CuGaS2, CuGaSe2, AgInSe2, AgGaS2, and AgGaSe2, were evaluated using the finite-depth-well effective mass approximation calculation. From the comparison of the calculation result with the experimental values for the CuInS2 case, it was shown that the calculation was highly valid to predict the size dependent optical gap of the ternary semiconductor QDs. The optical band gap of the above seven I-III-VI2 QDs covers a wide wavelength range from the near-infrared to ultraviolet. It has been shown that the I-III-VI2 semiconductor QDs have a significant potential as alternatives to the highly toxic cadmium-containing II-VI semiconductor QDs and they are applicable to the wide range of light emitting devices and solar cells. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3103768]

引用

页数：5

共 36 条

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