Strong <200> and <111> preferred orientations of MgO thin films synthesized on amorphous substrate by aerosol assisted-metallorganic chemical vapor deposition

被引:20
作者
Renault, O [1 ]
Labeau, M [1 ]
机构
[1] Inst Natl Polytech Grenoble, Mat & Genie Phys Lab, CNRS, UMR 5628, F-38402 St Martin Dheres, France
关键词
D O I
10.1149/1.1392541
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Thin films of polycrystalline magnesium oxide have been grown on glass substrate at low temperature (400 degrees C) using the aerosol assisted-metallorganic chemical vapor deposition technique, starting from magnesium acetate as precursor. For the first time highly <111>-oriented films grown at 0.40 mu m/h have been obtained by this deposition technique. By changing the nature of the liquid source, a lower deposition rate (0.12 mu m/h) and a strong <200> preferred orientation occur. The mean crystallite size along the direction of preferred orientation is, respectively, 35 and 50 nm for the <111>- and <200> oriented film and the disorientation is around 8 degrees. The films are free of carbonates or any residual organic contaminants. The surface roughness rms of the <200> oriented films is in the range of 6-9 nm and decreases as film thickness increases. Possible mechanisms for the occurrence of both texturing effects are discussed in terms of nucleation and growth texture. (C) 1999 The Electrochemical Society. S0013-4651(99)03-036-0. All rights reserved.
引用
收藏
页码:3731 / 3735
页数:5
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