Localized states at InGaN/GaN quantum well interfaces

被引：36

作者：

Brillson, LJ ^{[1
]}

Levin, TM

Jessen, GH

Ponce, FA

机构：

[1] Ohio State Univ, Dept Elect Engn, Columbus, OH 43210 USA

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 24期

关键词：

D O I：

10.1063/1.125472

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-energy electron-excited nanoscale-luminescence (LEEN) spectroscopy of GaN/InGaN/GaN double-heterojunction structures reveal the formation of electronic states localized near the quantum well interfaces under relatively In-rich conditions. These states are due to formation in a cubic GaN region comparable to the quantum well layer in thickness rather than the bulk native defects typically associated with growth quality. The nanoscale depth dependence of the noncontact, nondestructive LEEN technique enables detection of this competitive recombination channel within a few nanometers of the "buried" heterojunction interfaces. (C) 1999 American Institute of Physics. [S0003-6951(99)01250-4].

引用

页码：3835 / 3837

页数：3

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