Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor Alloys

被引：108

作者：

D'Costa, V. R. ^{[1
]}

Fang, Y. -Y. ^{[2
]}

Tolle, J. ^{[2
]}

Kouvetakis, J. ^{[2
]}

Menendez, J. ^{[1
]}

机构：

[1] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 10期

关键词：

PARAMETERS;

D O I：

10.1103/PhysRevLett.102.107403

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A direct absorption edge tunable between 0.8 and similar to 1.4 eV is demonstrated in strain-free ternary Ge1-x-ySixSny alloys epitaxially grown on Ge-buffered Si. This decoupling of electronic structure and lattice parameter-unprecedented in group-IV alloys-opens up new possibilities in silicon photonics, particularly in the field of photovoltaics. The compositional dependence of the direct band gap in Ge1-x-ySixSny exhibits a nonmonotonic behavior that is explained in terms of coexisting small and giant bowing parameters in the two-dimensional compositional space.

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页数：4

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