A comparative study of advanced MOSFET concepts

被引：159

作者：

Wann, CH

Noda, K

Tanaka, T

Yoshida, M

Hu, CM

机构：

[1] UNIV CALIF BERKELEY, BERKELEY, CA 94720 USA

[2] NEC CORP LTD, ULSI LABS, KANAGAWA 229, JAPAN

[3] FUJITSU LABS LTD, ULSI DEVICE LAB, ATSUGI, KANAGAWA 24301, JAPAN

[4] HITACHI LTD, DEVICE DEV CTR, TOKYO 198, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 10期

关键词：

D O I：

10.1109/16.536820

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has been the major device for integrated circuits over the past two decades. With technology advancement, there have been numerous MOSFET structures for channel length of 0.1 mu m and below reported in industrial research. A side-by-side comparison of these advanced device structures can provide useful understanding in device physics and the design trade-offs among MOSFET's parameters. In this work we employ experimental data, device simulation, and analytical modeling for device comparison. The devices were developed at several different research laboratories. Guided by experimental data and simulations, analytical models for topics such as threshold voltage, short-channel effect, and saturation current for these different MOSFET structures are developed. These analytical models are then used for optimizing each device structures and comparing the devices under the same set of constraints for a fair comparison. The key design parameters are highlighted and the strength and weakness of each device structure in various performance categories are discussed.

引用

页码：1742 / 1753

页数：12

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