Nanoscale switching and domain structure of ferroelectric BaBi4Ti4O15 thin films

被引:19
作者
Harnagea, C [1 ]
Pignolet, A [1 ]
Alexe, M [1 ]
Satyalakshmi, KM [1 ]
Hesse, D [1 ]
Gösele, U [1 ]
机构
[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1999年 / 38卷 / 11A期
关键词
scanning force microscopy; piezoresponse; layered ferroelectrics; epitaxial thin films; domains; switching;
D O I
10.1143/JJAP.38.L1255
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferroelectric domain structures of epitaxial BaBi4Ti4O15 (BBiT) thin films with different orientations have been imaged for the first time at the nanometer scale. Using the piezoresponse mode of scanning force microscopy it was demonstrated that the spontaneous polarization of BBiT has no component along the c-axis of the unit cell. Local piezoelectric hysteresis loops from non c-oriented grains with lateral sizes of 300 to 500 nm were recorded. The saturation values of the piezoelectric constant perpendicular to the c-axis are comparable to those measured macroscopically. A distinct ferroelectric behavior was still found in grains as small as 300 nm in lateral size.
引用
收藏
页码:L1255 / L1257
页数:3
相关论文
共 16 条
[1]   The physics of ferroelectric memories [J].
Auciello, O ;
Scott, JF ;
Ramesh, R .
PHYSICS TODAY, 1998, 51 (07) :22-27
[2]   Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics [J].
Damjanovic, D .
REPORTS ON PROGRESS IN PHYSICS, 1998, 61 (09) :1267-1324
[3]   MODIFICATION AND DETECTION OF DOMAINS ON FERROELECTRIC PZT FILMS BY SCANNING FORCE MICROSCOPY [J].
FRANKE, K ;
BESOLD, J ;
HAESSLER, W ;
SEEGEBARTH, C .
SURFACE SCIENCE, 1994, 302 (1-2) :L283-L288
[4]   Characterization and control of domain structure in SrBi2Ta2O9 thin films by scanning force microscopy [J].
Gruverman, A ;
Ikeda, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (8A) :L939-L941
[5]   Scanning force microscopy: Application to nanoscale studies of ferroelectric domains [J].
Gruverman, A ;
Auciello, O ;
Tokumoto, H .
INTEGRATED FERROELECTRICS, 1998, 19 (1-4) :49-83
[6]   Nanoscale imaging of domain dynamics and retention in ferroelectric thin films [J].
Gruverman, A ;
Tokumoto, H ;
Prakash, AS ;
Aggarwal, S ;
Yang, B ;
Wuttig, M ;
Ramesh, R ;
Auciello, O ;
Venkatesan, T .
APPLIED PHYSICS LETTERS, 1997, 71 (24) :3492-3494
[7]  
GRUVERMAN A, IN PRESS INTEGRATED
[8]  
KIM SK, 1994, NIPPON SERAM KYO GAK, V102, P722, DOI 10.2109/jcersj.102.722
[9]   Laser ablation preparation and property of bismuth-layer-structured SrBi2Ta2O9 and Bi4Ti3O12 ferroelectric thin films [J].
Okuyama, M ;
Wu, WB ;
Oishi, Y ;
Hamakawa, Y .
INTEGRATED FERROELECTRICS, 1996, 12 (2-4) :225-232
[10]   Large area pulsed laser deposition of aurivillius-type layered perovskite thin films [J].
Pignolet, A ;
Welke, S ;
Curran, C ;
Alexe, M ;
Senz, S ;
Hesse, D .
FERROELECTRICS, 1997, 202 (1-4) :285-298