Continuous stimulated terahertz emission due to intra-center population inversion in uniaxially strained germanium

被引：3

作者：

Altukhov, IV

Kagan, MS

Gousev, YP

Sinis, VP

Korolev, KA

Olsson, HK

Galperin, YM

Odnoblyudov, MA

Yassievich, IN

Chao, KA

机构：

[1] Royal Inst Technol, Dept Elect, S-16440 Kista, Sweden

[2] Russian Acad Sci, Inst Radioengn & Elect, Moscow 103907, Russia

[3] Univ Oslo, Inst Fys, N-0316 Oslo, Norway

[4] Lund Univ, Dept Theoret Phys, S-22362 Lund, Sweden

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 272卷 / 1-4期

关键词：

continuous operation; population inversion; terahertz;

D O I：

10.1016/S0921-4526(99)00319-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present study of stimulated THz emission from uniaxially strained Ge at low electric field. The cw regime was reached at electric field below 10 V/cm. The carrier population inversion is a result of capture and emission of free holes at strain-induced resonant acceptor states. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：458 / 460

页数：3

共 5 条

[1]

ALTUKHOV IV, 1988, JETP LETT+, V47, P164

[2] Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium [J].