Ferroelectric thin films: Review of materials, properties, and applications

被引：1508

作者：

Setter, N. ^{[1
]}

Damjanovic, D.

Eng, L.

Fox, G.

Gevorgian, S.

Hong, S.

Kingon, A.

Kohlstedt, H.

Park, N. Y.

Stephenson, G. B.

Stolitchnov, I.

Tagantsev, A. K.

Taylor, D. V.

Yamada, T.

Streiffer, S.

机构：

[1] Swiss Fed Inst Technol, Ceram Lab, Lausanne, Switzerland

[2] Tech Univ Dresden, Inst Appl Phys Photophys, D-01062 Dresden, Germany

[3] Ramtron Int Corp, Colorado Springs, CO 80921 USA

[4] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

[5] Ericsson Telecom AB, High Speed Elect Res Ctr, Molndal, Sweden

[6] Samsung Adv Inst Technol, Nano Devices Lab, Suwon 440600, South Korea

[7] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[8] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

[9] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 05期

关键词：

D O I：

10.1063/1.2336999

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An overview of the state of art in ferroelectric thin films is presented. First, we review applications: microsystems' applications, applications in high frequency electronics, and memories based on ferroelectric materials. The second section deals with materials, structure (domains, in particular), and size effects. Properties of thin films that are important for applications are then addressed: polarization reversal and properties related to the reliability of ferroelectric memories, piezoelectric nonlinearity of ferroelectric films which is relevant to microsystems' applications, and permittivity and loss in ferroelectric films-important in all applications and essential in high frequency devices. In the context of properties we also discuss nanoscale probing of ferroelectrics. Finally, we comment on two important emerging topics: multiferroic materials and ferroelectric one-dimensional nanostructures. (c) 2006 American Institute of Physics.

引用

页数：46

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