Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes

被引：26

作者：

Anderson, T. J. ^{[1
]}

Wang, H. T. ^{[1
]}

Kang, B. S. ^{[1
]}

Ren, F. ^{[1
]}

Pearton, S. J. ^{[2
]}

Osinsky, A. ^{[3
]}

Dabiran, Amir ^{[3
]}

Chow, P. P. ^{[3
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] SVT Associates, Eden Prairie, MN 55344 USA

来源：

APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 05期

关键词：

AlGaN/GaN; Hydrogen; Sensor; HEMT;

D O I：

10.1016/j.apsusc.2008.07.173

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of bias voltage polarity on the hydrogen sensing characteristics of AlGaN/GaN heterostructure Schottky diodes is reported. Under forward bias, there was a maximum observed in the sensitivity for hydrogen detection. For reverse bias, the hydrogen detection sensitivity increased proportionally to the bias voltage. A detection limit of 10 ppm of H-2 in N-2 was achieved under reverse bias with a current increase of 14% as compared to a detection limit of 100 ppm of H-2 for a similar current change under forward bias. (C) 2008 Elsevier B. V. All rights reserved.

引用

页码：2524 / 2526

页数：3

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