Nanoscopic switching behavior of epitaxial SrBi2Ta2O9 films deposited by pulsed laser deposition

被引：45

作者：

Gruverman, A

Pignolet, A

Satyalakshmi, KM

Alexe, M

Zakharov, ND

Hesse, D

机构：

[1] Sony Corp, Frontier Sci Labs, Yokohama, Kanagawa 2400005, Japan

[2] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.125671

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report results on scanning force microscopy (SFM) studies of epitaxial SrBi2Ta2O9 films which, in conjunction with complementary x-ray diffraction, scanning and transmission electron microscopy data, allow us to establish direct correlation between the crystallographic structure at the submicrometer range and the nano- and macroscopic switching behavior of the films. SFM topographic analysis of the films revealed a high degree of inhomogeneity at the submicrometer level: a number of rectangular and spherical grains protruding out of the flat surface. It has been found that the ferroelectric behavior of the films is primarily due to the (110) and (100)-oriented grains, while a flat background is c oriented and therefore is not switchable. Remanent polarization values obtained using SFM data were consistent with the results of the macroscopic hysteresis loop measurements. (C) 2000 American Institute of Physics. [S0003-6951(00)00901-3].

引用

页码：106 / 108

页数：3

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