Graphite/hydrogen reduction route to Ga2O3 nanobelts

被引：39

作者：

Zhang, J ^{[1
]}

Zhang, LD

机构：

[1] Yantai Univ, Dept Phys, Shandong 264005, Peoples R China

[2] Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2002年 / 122卷 / 09期

基金：

中国国家自然科学基金;

关键词：

nanostructures; crystal growth; nanofabrications; scanning and transmission electron microscopy;

D O I：

10.1016/S0038-1098(02)00133-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Large-scale fabrication of semiconductor Ga2O3 nanobelts was achieved through graphite/hydrogen reduction of Ga2O3 powder. The as-synthesized Ga2O3 nanobelts are pure, structurally uniform, and single crystalline. The nanobelts exhibit a beltlike morphology and have widths ranging from several tens to several hundreds of nanometers and lengths ranging from several tens to several hundreds of micrometers. The growth mechanism of the nanobelts is discussed. (C) 2002 Published by Elsevier Science Ltd.

引用

页码：493 / 496

页数：4

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