Capacitance measurements for diodes in the case of strong dependence of the diode-base series resistance on the applied voltage

被引：17

作者：

Lebedev, AA ^{[1
]}

Davydov, DV ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2000年 / 34卷 / 01期

关键词：

Magnetic Material; Applied Voltage; Electromagnetism; Strong Dependence; Series Resistance;

D O I：

10.1134/1.1187964

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Epitaxial-diffused 6H-SiC diodes incorporating a high-resistivity interlayer in the base were studied; the resistance of this interlayer varied when the forward-bias voltage was applied. It is shown that, in spite of the absence of direct indications of the effects of the series resistance (the capacitance is independent of frequency and the value of capacitive cutoff voltage is small), the capacitance measurements for such structures may be incorrect. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：115 / 118

页数：4

共 12 条

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[2]

ANIKIN MM, 1990, FIZ TEKH POLUPROV, V24, P1384

[3]

[Anonymous], FIZ TEKNIKA POLUPROV

[4]

ASTROVA EV, 1985, FIZ TEKH POLIUPROVOD, V19, P1382

[5]

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[6]

BERMAN LS, 1981, DEEP LEVEL TRANSIENT

[7]

KONSTANTINOV OV, 1983, FIZ TEKH POLUPROV, V17, P305

[8]

LEBEDEV AA, 1995, FIZ TEKH POLUPROV, V29, P1635

[9]

LEBEDEV AA, 1982, FIZ TEKH POLUPROV, V16, P1874

[10] Effect of boron diffusion on the high-voltage behavior of 6H-SiC p(+)nn(+) structures [J].

Ortolland, S ;

Raynaud, C ;

Chante, JP ;

Locatelli, ML ;

Lebedev, AA ;

Andreev, AN ;

Savkina, NS ;

Chelnokov, VE ;

Rastegaeva, MG ;

Syrkin, AL .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (09) :5464-5468

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