Mid-infrared electroluminescence in GaAs/AlGaAs structures

被引：23

作者：

Strasser, G

Kruck, P

Helm, M

Heyman, JN

Hvozdara, L

Gornik, E

机构：

[1] Solid State Electronics, Technical University Vienna

[2] Institut für Halbleiterphysik, Universität Linz

[3] Department of Physics and Astronomy, Macalester College, St. Paul

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 20期

关键词：

D O I：

10.1063/1.119329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Design, growth, and operation of an unipolar light emitting diode based on the material system GaAs/AlGaAs is reported, We present mid-infrared transmission, photocurrent, and electroluminescence measurements on a quantum cascade structure with intersubband transition energies greater than the optical phonon energy. Electroluminescence powers up to a few nanowatts at 6.9 mu m have been measured. (C) 1997 American Institute of Physics.

引用

页码：2892 / 2894

页数：3

共 5 条

[1] MIDINFRARED FIELD-TUNABLE INTERSUBBAND ELECTROLUMINESCENCE AT ROOM-TEMPERATURE BY PHOTON-ASSISTED TUNNELING IN COUPLED-QUANTUM WELLS [J].