Defects in CVD diamonds

被引：5

作者：

Badzian, A

Badzian, T

机构：

[1] Materials Research Laboratory, Pennsylvania State University, University Park

来源：

CERAMICS INTERNATIONAL | 1996年 / 22卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0272-8842(95)00092-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Crystallographically perfect diamond films and crystals can be grown by microwave-assisted CVD processes. The degree of quality of these crystals depends on the growth sector and process parameters. Surface reactions in the presence of atomic hydrogen can initiate the formation of twins and stacking faults. These defects disturb the stacking sequence of tetrahedra necessary for cubic diamond structure. X-ray techniques were used to determine disturbance of diamond lattice periodicity. Planar and linear disorders were analyzed with the help of X-ray diffuse scattering. The diffuse scattering around (111) reciprocal lattice point can be used as a test for crystallographical perfection of diamond crystals.

引用

页码：223 / 228

页数：6

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