Shallow donors in GaN: A magnetic double resonance investigation

被引：25

作者：

Denninger, G

Beerhalter, R

Reiser, D

Maier, K

Schneider, J

Detchprohm, T

Hiramatsu, K

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,D-79108 FREIBURG,GERMANY

[2] NAGOYA UNIV,SCH ENGN,DEPT ELECTR,CHIKUSA KU,NAGOYA,AICHI 46801,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 99卷 / 05期

关键词：

semiconductors; electronic states; spin dynamics; electron paramagnetic resonance; nuclear resonances;

D O I：

10.1016/0038-1098(96)00193-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The residual shallow donor in GaN is investigated by electron spin resonance and the Overhauser shift double resonance technique. From the resolved quadrupolar splitting, we determine the electric field gradients at the Ga and the N site. The hyperfine interaction, as determined simultaneously from the Overhauser shift and the Knight shift, supports a delocalized donor wavefunction with an effective Bohr radius of 20-30 Angstrom. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：347 / 351

页数：5

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