High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film

被引:120
作者
Liao, Meiyong [1 ]
Koide, Yasuo [1 ]
机构
[1] Natl Inst Mat Sci, Sensor Mat Ctr, Tsukuba, Ibaraki 3050044, Japan
关键词
D O I
10.1063/1.2349829
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors report on the high-performance metal-semiconductor-metal planar photoconductors based on unintentionally doped homoepitaxial diamond thin films. The photoconductors exhibit a discrimination ratio up to 10(8) between 210 nm and visible light. The spectral responsivity at 220 nm is about 6 A/W biased at 3 V, corresponding to a photoconductivity gain of 33. Time-resolved photoresponse measurements using a pulsed 193 nm laser show that the response time is smaller than the pulse width of 10 ns. (c) 2006 American Institute of Physics.
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页数:3
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