Formation of edge dislocations in thin epitaxial YBCO films

被引：58

作者：

Svetchnikov, V ^{[1
]}

Pan, V ^{[1
]}

Traeholt, C ^{[1
]}

Zandbergen, H ^{[1
]}

机构：

[1] NATL CTR HREM,NL-2628 AL DELFT,NETHERLANDS

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1997年 / 7卷 / 02期

关键词：

D O I：

10.1109/77.620831

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transmission electron microscopy (TEM) of thin YBa2Cu3O7-delta (YBCO) films on different single-crystalline substrates revealed (by Moire patterns) edge dislocations having non-superconducting cores normal to the substrate. The dislocations are in small-angle boundaries with the average density as high as 10(11)cm(-2). An extremely high density of dislocations is thought to be the cause of the high critical current density in YBCO epitaxial films. The mechanism for dislocation formation is considered in the framework of a computer model. Computer modeling provided the details of the dislocation arrangement either in domain boundaries or in twist boundaries, depending on the angle of the in-plane misorientation between film and substrate lattices, The model is found to be in good agreement with experimental data on dislocations in YBCO superconducting films.

引用

页码：1396 / 1398

页数：3

共 16 条

[1] STRAIN RELAXATION AND FORMATION OF SCREW DISLOCATIONS IN YBCO FILMS ON MGO SUBSTRATES [J].