Hydrogen-induced degradation in ferroelectric Bi3.25La0.75Ti3O12

被引：18

作者：

Seo, S

Yoon, JG

Kim, JD

Song, TK

Kang, BS

Noh, TW

Lee, YK

Kim, CJ

Lee, IS

Lee, JK

Park, YS

机构：

[1] Seoul Natl Univ, Res Ctr Oxide Elect, Seoul 151742, South Korea

[2] Seoul Natl Univ, Sch Phys, Seoul 151742, South Korea

[3] Samsung Adv Inst Technol, Microelect Lab, Suwon 440600, South Korea

[4] Univ Suwon, Dept Phys, Kyunggido 445743, South Korea

[5] Changwon Natl Univ, Dept Ceram Sci & Engn, Chang Won 641773, Kyungnam, South Korea

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 10期

关键词：

D O I：

10.1063/1.1505110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of forming gas annealing (FGA) were investigated on ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films fabricated by a chemical solution deposition. With the FGA up to 350 degreesC, the Pt/BLT/Pt capacitors showed good ferroelectric characteristics without significant degradation. As the FGA temperature was increased, a decomposition of the BLT powder sample was observed by using thermogravimetric analysis. By comparing the time-dependent weight loss of BLT with that of Bi4Ti3O12 during FGA, La doping was found to significantly impede the decomposition rate. The decomposition, especially in the (Bi2O2)(2+) layers, was discussed as a hydrogen-induced degradation mechanism in the Bi-layered perovskite ferroelectrics. (C) 2002 American Institute of Physics.

引用

页码：1857 / 1859

页数：3

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