Sr-doped PbZr1-xTixO3 ceramic:: structural study and field-induced reorientation of ferroelectric domains

被引:67
作者
Bedoya, C
Muller, C
Baudour, JL
Madigou, V
Anne, M
Roubin, M
机构
[1] Univ Toulon & Var, Lab Mat Multiphases & Interfaces, F-83957 La Garde, France
[2] Univ Toulon & Var, LPCM3, F-83957 La Garde, France
[3] CNRS, Cristallog Lab, F-38042 Grenoble, France
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 75卷 / 01期
关键词
PZT ceramic; morphotropic phase boundary; field-induced polarisation; domains reorientation; X-ray powder diffraction;
D O I
10.1016/S0921-5107(00)00383-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Sr-doped PZT ceramic, with a composition in the morphotropic phase boundary, was synthesised by solid state reaction. In a first step, from room temperature X-ray powder diffraction data, the structures of the tetragonal (space group P4mm, Z = 1, a(t) = 4.010((l)) Angstrom and c(t) = 4.123((l)) Angstrom) and rhombohedral (space group R3m, Z = 3, a(hex) = 5.755((4)) Angstrom and c(hex) = 7.089((l)) Angstrom) phases have been refined using a Rietveld-type method. Chemical occupancies, cation displacements and spontaneous polarisation were derived for the two coexisting phases. Moreover, to investigate the ferroelectric domains reorientation under a static electrical field, the ceramic was poled and then analysed by X-ray powder diffraction. The effect of the electrical field on the macroscopic polarisation of the ceramic was studied using the ratios of selected Bragg reflections intensities. An electrical field of 1 kV mm(-1) necessary to trigger the domains reorientation in the two phases was determined and the percentage of domains switching has been estimated from simple models. On the other hand, to appreciate the degree of orientation, diffraction patterns were simulated using a preferred orientation function. Finally, the depoling process of the ceramic has been studied from successive thermal treatments. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:43 / 52
页数:10
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