First Principles Model of Amorphous Silicon Lithiation

被引:182
作者
Chevrier, V. L. [1 ]
Dahn, J. R.
机构
[1] Dalhousie Univ, Dept Phys & Atmospher Sci, Halifax, NS B3H 3J5, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
amorphous semiconductors; density functional theory; electrochemical electrodes; elemental semiconductors; intercalation compounds; lithium; protocols; secondary cells; silicon; voids (solid); AB-INITIO; LITHIUM; PHASES;
D O I
10.1149/1.3111037
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A protocol to simulate the lithiation of amorphous Si at room temperature is presented. One important step in the protocol is the identification of spherical voids in the lithiated structure. The protocol is simple, easily implemented and automated, and can be used with any modeling code capable of structural optimization. The protocol was used in conjunction with density functional theory and projector augmented wave data sets to accurately reproduce the potential composition curve of an experimental Li/LixSi electrochemical cell at room temperature. Volume changes as a function of lithiation obtained from the protocol were also in good agreement with experiment. Based on the agreement with experiment, the protocol appears to yield structures representative of amorphous LixSi obtained when lithiating Si at room temperature.
引用
收藏
页码:A454 / A458
页数:5
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