Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN

被引：312

作者：

Reynolds, DC

Look, DC

Jogai, B

Morkoc, H

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 101卷 / 09期

关键词：

D O I：

10.1016/S0038-1098(96)00697-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Several of the optical transitions in ZnO and GaN appear to derive from a similar origin and have considerable overlap in the energy regions where they occur. In particular the donor-acceptor pair transitions and the well known ''yellow band'' in GaN and the analogous ''green band'' in ZnO show remarkable similarities. Because of these similarities it is likely that the respective transitions in the two materials are defect related and share common mechanisms. (C) 1997 Published by Elsevier Science Ltd.

引用

页码：643 / 646

页数：4

共 10 条

[1] UBER DIE LUMINESZENZ UND ABSORPTION VON ZNO-KRISTALLEN [J].

ANDRESS, B .

ZEITSCHRIFT FUR PHYSIK, 1962, 170 (01) :1-&

[2] NATIVE DEFECTS IN GALLIUM NITRIDE [J].

BOGUSLAWSKI, P ;

BRIGGS, EL ;

BERNHOLC, J .

PHYSICAL REVIEW B, 1995, 51 (23) :17255-17258

[3] OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION [J].

GLASER, ER ;

KENNEDY, TA ;

DOVERSPIKE, K ;

ROWLAND, LB ;

GASKILL, DK ;

FREITAS, JA ;

KHAN, MA ;

OLSON, DT ;

KUZNIA, JN ;

WICKENDEN, DK .

PHYSICAL REVIEW B, 1995, 51 (19) :13326-13336

[4]

HEILAND G, 1959, SOLID STATE PHYSICS, V8

[5] Properties of the yellow luminescence in undoped GaN epitaxial layers [J].

Hofmann, DM ;

Kovalev, D ;

Steude, G ;

Meyer, BK ;

Hoffmann, A ;

Eckey, L ;

Heitz, R ;

Detchprom, T ;

Amano, H ;

Akasaki, I .

PHYSICAL REVIEW B, 1995, 52 (23) :16702-16706

[6]

LOOK DC, IN PRESS APPL PHYS L

[7] Gallium vacancies and the yellow luminescence in GaN [J].

Neugebauer, J ;

Van de Walle, CG .

APPLIED PHYSICS LETTERS, 1996, 69 (04) :503-505

[8] MECHANISM OF YELLOW LUMINESCENCE IN GAN [J].

OGINO, T ;

AOKI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) :2395-2405

[9] GROWTH OF ZNO SINGLE CRYSTALS [J].

PARK, YS ;

REYNOLDS, DC .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) :756-+

[10] MECHANISM OF YELLOW LUMINESCENCE IN GAN [J].

SUSKI, T ;

PERLIN, P ;

TEISSEYRE, H ;

LESZCZYNSKI, M ;

GRZEGORY, I ;

JUN, J ;

BOCKOWSKI, M ;

POROWSKI, S ;

MOUSTAKAS, TD .

APPLIED PHYSICS LETTERS, 1995, 67 (15) :2188-2190

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