Epitaxial growth of semiconducting LaVO3 thin films

被引：64

作者：

Choi, W ^{[1
]}

Sands, T

Kim, KY

机构：

[1] Univ Calif Berkeley, Dept Mat Sci & Mineral Engn, Berkeley, CA 94720 USA

[2] LG Elect, Display R&D Ctr, Seocho Gu, Seoul 137724, South Korea

来源：

JOURNAL OF MATERIALS RESEARCH | 2000年 / 15卷 / 01期

关键词：

D O I：

10.1557/JMR.2000.0001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial thin films of LaVO3 were grown on (001) LaAlO3 substrates by pulsed laser deposition from a LaVO4 target in a vacuum ambient at substrate temperatures greater than or equal to 500 degrees C, X-ray diffraction studies showed that epitaxial LaVO3 films consist of mixed domains of [110] and [001] orientations. Thermoprobe and four-probe conductivity measurements demonstrated the p-type semiconducting behavior of the epitaxial LaVO3 films. The temperature dependence of the conductivity is consistent with a thermally activated hopping mechanism with an activation barrier of 0.16 eV.

引用

页码：1 / 3

页数：3

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