Characterization of silicon oxynitride gas barrier films

被引：40

作者：

Iwamori, S ^{[1
]}

Gotoh, Y ^{[1
]}

Moorthi, K ^{[1
]}

机构：

[1] Mitsui Chem Inc, Mat Sci Lab, Sodegaura, Chiba 2990265, Japan

来源：

VACUUM | 2002年 / 68卷 / 02期

关键词：

oxynitride; gas barrier; reactive sputtering; polyethylene terephthalate;

D O I：

10.1016/S0042-207X(02)00294-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

New transparent gas barrier materials made of thin silicon oxynitride films deposited on polyethylene terephthalate substrates via reactive sputtering in nitrogen plasma have been developed and characterized. The gas barrier properties of these materials have been evaluated and compared with silicon oxide thin films. The oxygen transmission rates of the silicon oxynitride (SiON) films were lower than those of the SiOx films. The SiON films are amorphous and contain no pinholes or cracks. The OTR decreases when relative nitrogen content in the SiON films increases. The increase in nitrogen content causes an increase in film density. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：113 / 117

页数：5

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