RF MEMS capacitive switches fabricated with HDICP CVD SiNx

被引：13

作者：

Chang, CH ^{[1
]}

Qian, JY ^{[1
]}

Cetiner, BA ^{[1
]}

Xu, Q ^{[1
]}

Bachman, M ^{[1
]}

Kim, HK ^{[1
]}

Ra, Y ^{[1
]}

De Flaviis, F ^{[1
]}

Li, GP ^{[1
]}

机构：

[1] Univ Calif Irvine, Dept Elect & Comp Engn, Irvine, CA 92697 USA

来源：

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年

关键词：

D O I：

10.1109/MWSYM.2002.1011600

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The role of very low temperature (90-170degreesC) high density inductively coupled plasma chemical vapor deposition (HDICP CVD) process in RF MEMS switch fabrication is addressed. The results on SiNx layers produced by both HDICP CVD and plasma enhanced CVD (PECVD) are compared in terms of surface roughness, breakdown voltage and RF MEMS switch performance. It is found that HDICP CVD can provide very thin (250 Angstrom) nitride layer having root mean square (rms) roughness value of 1.6 nm at very low temperature (90degreesC). The breakdown strength is measured to be 9MV/cm. A SiNx layer with these characteristics improves the device reliability and dramatically increases its down position capacitance providing additional degree of freedom in RF MEMS switch design.

引用

页码：231 / 234

页数：4