Lithography for semiconductor technology

被引:8
作者
Ngo, C
Rosilio, C
机构
[1] LETI, DEIN/SPE
关键词
D O I
10.1016/S0168-583X(97)00146-8
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We present a short overview of lithography applied to semiconductor technology. It covers optical, X-rays, electrons and ions beam lithographies. The properties of resists and of the associated processes, which are the heart of this technology, are presented. (C) 1997 Elsevier Science B.V.
引用
收藏
页码:22 / 29
页数:8
相关论文
共 17 条
[1]  
ALLEN RD, 1993, SOLID STATE TECHNOL, V35, P53
[2]  
BEDNAR B, 1993, RESISTS MICROLITHOGR, V76
[3]   Fabrication limits of electron beam lithography and of UV, X-ray and ion-beam lithographies [J].
Broers, AN .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1995, 353 (1703) :291-311
[4]  
CERRINA F, 1995, SPIE HDB LITHOGRAPHY
[5]  
HOHN FJ, 1994, NATO ADV SCI INST SE, V264, P1
[6]  
*I MICR CETEHOR, 1991, RECH MICR REAL PERP
[7]  
Jain K., 1990, EXCIMER LASER LITHOG
[8]  
LAMOLA AA, 1991, SOLID STATE TECH AUG, P54
[9]  
OBERAI AS, 1987, SOLID STATE TECHNOL, V30, P123
[10]  
QUEISSER HJ, 1977, APPL SOLIDS