Performance and loss analyses of high-efficiency chemical bath deposition (CBD)-ZnS/Cu(In1-x) Se2 thin-film solar cells

被引：39

作者：

Pudov, A ^{[1
]}

Sites, J

Nakada, T

机构：

[1] Colorado State Univ, Dept Phys, Ft Collins, CO 80523 USA

[2] Aoyama Gakuin Univ, Dept Elect Engn & Elect, Setagaya Ku, Tokyo 1578572, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 6B期

关键词：

ZnS buffer; Cu(In; Ga)Se-2; thin-film solar cells; loss analysis; ZnO;

D O I：

10.1143/JJAP.41.L672

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chemically deposited ZnS has been investigated as a buffer layer alternative to cadmium sulfide (CdS) in polycrystalline thin-film Cu(In1-xGax)Se-2 (CIGS) solar cells. Cells with efficiency of up to 18.1% based on chemical bath deposition (CBD)-ZnS/CIGS heterostructures have been fabricated. This paper presents the performance and loss analyses of these cells based on the current-voltage (J-V) and spectral response curves, as well as comparisons with high efficiency CBD-CdS/CIGS and crystalline silicon counterparts. The CBD-ZnS/CIGS devices have effectively reached the efficiency of the current record CBD-CdS/CIGS cell. The effects of the superior current of the CBD-ZnS/CIGS cell and the superior junction quality of the CBD-CdS/CIGS cell on overall performance nearly cancel each other.

引用

页码：L672 / L674

页数：3

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