Ab initio prediction of the structure of glide set dislocation cores in GaAs

被引:20
作者
Beckman, SP
Xu, X
Specht, P
Weber, ER
Kisielowski, C
Chrzan, DC [1 ]
机构
[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Sci Mat, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA
关键词
D O I
10.1088/0953-8984/14/48/302
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The structures of the glide set partial dislocations in GaAs are predicted using an ab initio electronic structure total energy method employing ultrasoft pseudopotentials. The single- and double-period reconstructions of the 90degrees partial dislocations are found to be nearly degenerate in energy. The structure of the 30degrees beta-dislocation is found to agree qualitatively with an experimentally determined structure.
引用
收藏
页码:12673 / 12680
页数:8
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