Transient tunneling current in laser-assisted scanning tunneling microscopy

被引:39
作者
Lyubinetsky, I
Dohnalek, Z
Ukraintsev, VA
Yates, JT
机构
[1] Department of Chemistry, University of Pittsburgh, Surface Science Center, Pittsburgh
关键词
D O I
10.1063/1.366251
中图分类号
O59 [应用物理学];
学科分类号
摘要
The transient tunneling current induced by pulsed laser irradiation of a scanning tunneling microscope (STM) tunneling gap was observed to occur over a 100 mu s time scale range in response to a 20 ns duration of the laser pulse. The amplitude of the transient current varies exponentially with laser power, confirming our previous suggestion that thermal expansion of the STM tip is the main source of the transient increase of tunneling current. This thermal expansion mechanism is also supported by the observation of a qualitatively similar variation of the tunneling current during the piezo-driven decrease of the tip-sample separation. (C) 1997 American Institute of Physics.
引用
收藏
页码:4115 / 4117
页数:3
相关论文
共 22 条
[1]   PHOTOTHERMAL MODULATION OF THE GAP DISTANCE IN SCANNING TUNNELING MICROSCOPY [J].
AMER, NM ;
SKUMANICH, A ;
RIPPLE, D .
APPLIED PHYSICS LETTERS, 1986, 49 (03) :137-139
[2]   LASER-FREQUENCY MIXING USING THE SCANNING TUNNELING MICROSCOPE [J].
ARNOLD, L ;
KRIEGER, W ;
WALTHER, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02) :466-469
[3]   SCANNING TUNNELING MICROSCOPY OF PHOTOEXCITED CARRIERS AT THE SI(001) SURFACE [J].
CAHILL, DG ;
HAMERS, RJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :564-567
[4]   Laser pulse desorption under scanning tunneling microscope tip-Cl removal from single site on Si(100) [J].
Dohnalek, Z ;
Lyubinetsky, I ;
Yates, JT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (03) :1488-1492
[5]   TRANSITION FROM THE TUNNELING REGIME TO POINT CONTACT STUDIED USING SCANNING TUNNELING MICROSCOPY [J].
GIMZEWSKI, JK ;
MOLLER, R .
PHYSICAL REVIEW B, 1987, 36 (02) :1284-1287
[6]   ANALYSIS AND COMPENSATION OF THERMAL EFFECTS IN LASER-ASSISTED SCANNING TUNNELING MICROSCOPY [J].
GRAFSTROM, S ;
KOWALSKI, J ;
NEUMANN, R ;
PROBST, O ;
WORTGE, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :568-572
[7]   ATOMICALLY RESOLVED CARRIER RECOMBINATION AT SI(111)-(7X7) SURFACES [J].
HAMERS, RJ ;
MARKERT, K .
PHYSICAL REVIEW LETTERS, 1990, 64 (09) :1051-1054
[8]   ELECTRONIC-PROPERTIES OF NANOMETER-SIZE METAL-SEMICONDUCTOR POINT CONTACTS STUDIED BY STM [J].
HASEGAWA, Y ;
LYO, IW ;
AVOURIS, P .
APPLIED SURFACE SCIENCE, 1994, 76 (1-4) :347-352
[9]   MICROSCOPIC THEORY OF SCANNING TUNNELING MICROSCOPE FOR FINITE ELECTRIC-FIELD AND CURRENT [J].
HIROSE, K ;
TSUKADA, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03) :2164-2166
[10]   OPTICAL INTERACTIONS IN THE JUNCTION OF A SCANNING TUNNELING MICROSCOPE [J].
KUK, Y ;
BECKER, RS ;
SILVERMAN, PJ ;
KOCHANSKI, GP .
PHYSICAL REVIEW LETTERS, 1990, 65 (04) :456-459