Lasing in neonlike sulphur and silicon

被引：21

作者：

Li, YL ^{[1
]}

Lu, PX ^{[1
]}

Pretzler, G ^{[1
]}

Fill, EE ^{[1
]}

机构：

[1] ACAD SINICA,SHANGHAI INST OPT & FINE MECH,SHANGHAI 201800,PEOPLES R CHINA

来源：

OPTICS COMMUNICATIONS | 1997年 / 133卷 / 1-6期

关键词：

D O I：

10.1016/S0030-4018(96)00438-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report lasing in neonlike sulphur and silicon using the prepulse technique on the Asterix iodine laser. In sulphur, lasing is observed at 60.1 and 60.8 nm on the 3d(1)P(1)-3p(1)P(1) and 3p(1)S(0)-3s(1)P(1) transitions, respectively. The drive energy for the 60.8 nm laser was scaled down to similar to 20 J. In silicon, lasing at 87.4 nm on the 3p(1)S(0)-3s(1)P(1) transitions was observed.

引用

页码：196 / 200

页数：5

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