Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

被引：342

作者：

Celano, Umberto ^{[1
,2
]}

Goux, Ludovic ^{[1
]}

Belmonte, Attilio ^{[1
]}

Opsomer, Karl ^{[1
]}

Franquet, Alexis ^{[1
]}

Schulze, Andreas ^{[1
]}

Detavernier, Christophe ^{[1
,3
]}

Richard, Olivier ^{[1
]}

Bender, Hugo ^{[1
]}

Jurczak, Malgorzata ^{[1
]}

Vandervorst, Wilfried ^{[1
,2
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Phys & Astron IKS, B-3001 Louvain, Belgium

[3] Univ Ghent, B-9000 Ghent, Belgium

来源：

NANO LETTERS | 2014年 / 14卷 / 05期

关键词：

Conductive filament; resistive switching; C-AFM; CBRAM; AFM-tomography; REAL-TIME OBSERVATION; DYNAMIC GROWTH/DISSOLUTION; OXIDE; RESISTANCE; MECHANISMS;

D O I：

10.1021/nl500049g

中图分类号：

O6 [化学];

学科分类号：

070301 [无机化学];

摘要：

The basic unit of information in filamentary-based resistive switching memories is physically stored in a conductive filament. Therefore, the overall performance of the device is indissolubly related to the properties of such filament. In this Letter, we report for the first time on the three-dimensional (3D) observation of the shape of the conductive filament. The observation of the filament is done in a nanoscale conductive-bridging device, which is programmed under real operative conditions. To obtain the 3D-information we developed a dedicated tomography technique based on conductive atomic force microscopy. The shape and size of the conductive filament are obtained in three-dimensions with nanometric resolution. The observed filament presents a conical shape with the narrow part close to the inert-electrode. On the basis of this shape, we conclude that the dynamic filament-growth is limited by the cation transport. In addition, we demonstrate the role of the programming current, which clearly influences the physical-volume of the induced conductive filaments.

引用

页码：2401 / 2406

页数：6

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