Failure modes in vapor-deposited organic LED's

被引：4

作者：

Antoniadis, H

Hueschen, MR

Miller, JN

Moon, RL

Roitman, DB

Sheats, JR

机构：

[1] Hewlett-Packard Labs., Palo Alto, CA 94304

来源：

MACROMOLECULAR SYMPOSIA | 1998年 / 125卷

关键词：

D O I：

10.1002/masy.19981250104

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

A study of the main failure mechanisms in vacuum vapor-deposited organic light-emitting diodes (LED's) is presented. Three degradation modes were identified for a prototype bilayer ITO/TPD/Alq(3)/Mg/Ag device: a) formation and growth of black nonemissive spots, b) abrupt ceasing of light emission associated with catastrophic failures caused by electrical shorts, and c) long term wearout associated with the decrease of quantum efficiency and luminance along with an increase in voltage, while the device is stressed under constant current.

引用

页码：59 / 67

页数：9