Systematic investigation of growth of InP nanowires by metalorganic vapor-phase epitaxy

被引：11

作者：

Bhunia, S

Kawamura, T

Fujikawa, S

Watanabe, Y

机构：

[1] NTT Corp, Basic Res Labs, Kanagawa 2430198, Japan

[2] Himeji Inst Technol, Ako 6781297, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 24卷 / 1-2期

关键词：

InP; nanowires; an nanoparticles; VLS; MOVPE;

D O I：

10.1016/j.physe.2004.04.003

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The behavior of the vapor-liquid-solid growth of InP nanowires on (111)B oriented InP substrates by metalorganic vapor-phase epitaxial technique has been reported in details. The nanowires were grown using the colloidal An nanoparticles as the seed to control their diameter in the nanometer scale. The grown nanowires were found to be very uniform in cross section along their longitudinal axis, closely spaced and aligned vertically on the substrate surface. The growth behavior of the nanowires and the sensitive growth and anneal temperature dependence on the stability of the nanowires have been discussed in details. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：138 / 142

页数：5

共 17 条

[1] Free-standing and vertically aligned InP nanowires grown by metalorganic vapor phase epitaxy [J].