The differential efficiency of quantum-well lasers

被引：106

作者：

Smowton, PM

Blood, P

机构：

[1] Dept. of Physics and Astronomy, University of Wales, Cardiff

[2] Institute of Physics, London

[3] Bell Laboratories, Murray Hill, NJ

[4] Department of Physics, University of Wales Cardiff

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1997年 / 3卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

quantum efficiency; quantum-well lasers; spontaneous emission;

D O I：

10.1109/2944.605699

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have analyzed the internal differential efficiency of quantum-well lasers in terms of current spreading, carrier injection into the well, and the radiative efficiency within the well, We quantify the first two of these processes by extracting information from spontaneous emission measurements as a function of device length, current, and temperature, We show that the carrier injection efficiency is responsible for the temperature dependence of the external differential efficiency of GaInP quantum-well (QW) lasers by comparing values from the slope of the laser power output versus current characteristic with our experimental values for current spreading and injection efficiency.

引用

页码：491 / 498

页数：8

共 14 条

[1]

AGRAWAL GP, 1993, SEMICONDUCTOR LASERS

[2]

BIARD JR, 1964, T METALL SOC AIME, V230, P286

[3] MEASUREMENT AND CALCULATION OF SPONTANEOUS RECOMBINATION CURRENT AND OPTICAL GAIN IN GAAS-ALGAAS QUANTUM-WELL STRUCTURES [J].