A new method to characterize TCO/p contact resistance in a-Si solar cells

被引:6
作者
Hegedus, SS [1 ]
Gibson, M [1 ]
机构
[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA
来源
AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999 | 1999年 / 557卷
关键词
D O I
10.1557/PROC-557-737
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A method is presented to characterize the TCO/p contact and the TCO sheet resistance in a-Si based p-i-n superstrate devices. It requires having scribed TCO strips, which are electrically isolated before a-Si deposition, then fabricating rows of individual devices on each strip. Analysis of 4-terminal measurements in different V-sensing configurations yields the TCO/p contact and TCO sheet resistance in a straightforward manner. The method is applied to devices fabricated on 3 brands of commercial SnO2 substrates. The TCO/p contact resistance is found to be similar to 2 Ohm-cm(2) and the sheet resistance decreases by 2-4 Ohm/sq after a-Si deposition on all 3 brands of SnO2 substrates.
引用
收藏
页码:737 / 742
页数:6
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