UBM (Under Bump Metallization) study for Pb-free electroplating bumping: Interface reaction and electromigration

被引：16

作者：

Jang, SY ^{[1
]}

Wolf, J ^{[1
]}

Kwong, WS ^{[1
]}

Paik, KW ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Yusong Gu, Taejon 305701, South Korea

来源：

52ND ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, 2002 PROCEEDINGS | 2002年

关键词：

D O I：

10.1109/ECTC.2002.1008261

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of reflow time, high temperature aging, and current-stress on interface reactions between Under Bump Metallization (UBM) systems and electroplated bumps have been studied. Each of TiW/Cu/electroplated Cu, Cr/CrCu/Cu, NiV/Cu, and TiW/NiV UBMs was coupled with Pb/63Sn or Sn/3.5Ag flip-chip solder bump. The Sn/3.5Ag and Pb/63Sn flip-chip solder bumps were fabricated on the UBMs using alloy plating. Plated Sn/Ag solder becomes Sn/Ag/Cu by reflowing on the Cu containing UBMs. Intermetallic Compounds (IMC) such as Cu-Sn and Ni-Sn spall-off from UBM/solder interface as Cu or Ni, the solder wettable layer' is consumed during liquid-state 'reflow' process. In thermoelectromigration test, metal atoms move in the same direction as the electron current flows and the subsequent void accumulation at cathode UBM induces failures.

引用

页码：1213 / 1220

页数：4

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