Quantum wells with atomically smooth interfaces

被引：54

作者：

Yoshita, M

Akiyama, H

Pfeiffer, LN

West, KW

机构：

[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

[2] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 01期

关键词：

D O I：

10.1063/1.1490144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By a cleaved-edge overgrowth method with molecular beam epitaxy and a (110) growth-interrupt anneal, we have fabricated a GaAs quantum well exactly 30 monolayers thick bounded by atomically smooth AlGaAs heterointerfaces without atomic roughness. Microphotoluminescence imaging of this quantum well indeed shows spatially uniform and spectrally sharp emission over areas of several tens of microns in extent. By adding a fractional GaAs monolayer to our quantum well we are able to study the details of the atomic step-edge kinetics responsible for flat interface formation. (C) 2002 American Institute of Physics.

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页码：49 / 51

页数：3

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