Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition

被引：45

作者：

Mueller, J. ^{[1
]}

Boescke, T. S. ^{[2
]}

Schroeder, U. ^{[2
]}

Reinicke, M. ^{[2
]}

Oberbeck, L. ^{[2
]}

Zhou, D. ^{[2
]}

Weinreich, W. ^{[1
]}

Kuecher, P. ^{[1
]}

Lemberger, M. ^{[3
]}

Frey, L. ^{[3
]}

机构：

[1] Fraunhofer Ctr Nonoelect Technol, D-01099 Dresden, Germany

[2] Qimonda Dresden GmbH & Co OHG, D-01099 Dresden, Germany

[3] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 7-9期

关键词：

Hafnium zirconate; Dielectric; High-k; Metal-insulator-metal; Capacitor; DRAM; Reliability; ALD; Hafnium; Zirconium; MIM; ZIRCONIA; NM;

D O I：

10.1016/j.mee.2009.03.076

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A broad compositional range of the dielectric material Zr(1-x)HfxO(2) was evaluated with respect to its applicability in DRAM storage capacitors. The paper reports on phase composition, crystallization behavior, and electrical properties of the mixed system in planar metal-insulator-metal (MIM) capacitors. Admixture of HfO2 into ZrO2 proved to stabilize the deposition process at high temperatures without degrading the dielectric properties of the film. Compared to pure ZrO2 the 30-40% HfO2 containing films showed improved scalability (capacitance equivalent thickness 0.73 nm at 8 * 10(-9) A/cm(2)) as well as improved reliability. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1818 / 1821

页数：4

共 12 条

[1]

Berthelot A, 2006, PROC EUR S-STATE DEV, P343

[2] Stabilization of higher-κ tetragonal HfO2 by SiO2 admixture enabling thermally stable metal-insulator-metal capacitors [J].

Boescke, T. S. ;

Govindarajan, S. ;

Kirsch, P. D. ;

Hung, P. Y. ;

Krug, C. ;

Lee, B. H. ;

Heitmann, J. ;

Schroeder, U. ;

Pant, G. ;

Gnade, B. E. ;

Krautschneider, W. H. .

APPLIED PHYSICS LETTERS, 2007, 91 (07)

[3] New TIT capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60 nm and below DRAMs [J].

Cho, Ho Jin ;

Kim, Young Dae ;

Park, Dong Su ;

Lee, Euna ;

Park, Cheol Hwan ;

Jang, Jun Soo ;

Lee, Keum Bum ;

Kim, Hai Won ;

Ki, Young Jong ;

Han, Keun ;

Song, Yong Wook .

SOLID-STATE ELECTRONICS, 2007, 51 (11-12) :1529-1533

[4] Tuning the dielectric properties of hafnium silicate films [J].

Fachmann, Christian ;

Frey, Lothar ;

Kudelka, Stephan ;

Boescke, Tim ;

Nawka, Stefan ;

Erben, Elke ;

Doll, Theodor .

MICROELECTRONIC ENGINEERING, 2007, 84 (12) :2883-2887

[5]

KIL DS, 2006, VLSI, P38

[6] Physical and electrical characterization of high-k ZrO2 metal-insulator-metal capacitor [J].

Kim, Joo-Hyung ;

Ignatova, Velislava ;

Kuecher, Peter ;

Heitmann, Johannes ;

Oberbeck, Lars ;

Schroeder, Uwe .

THIN SOLID FILMS, 2008, 516 (23) :8333-8336

[7] Thermochemical insights into refractory ceramic materials based on oxides with large tetravalent cations [J].

Navrotsky, A .

JOURNAL OF MATERIALS CHEMISTRY, 2005, 15 (19) :1883-1890

[8] Energy crossovers in nanocrystalline zirconia [J].

Pitcher, MW ;

Ushakov, SV ;

Navrotsky, A ;

Woodfield, BF ;

Li, GS ;

Boerio-Goates, J ;

Tissue, BM .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2005, 88 (01) :160-167

[9] Physical and electrical properties of atomic-layer-deposited HfxZr1-xO2 with TEMAHf, TEMAZr, and ozone [J].

Triyoso, D. H. ;

Gregory, R. ;

Park, M. ;

Wang, K. ;

Lee, S. I. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (01) :H43-H46

[10] The zirconia-hafnia system: DTA measurements and thermodynamic calculations [J].

Wang, Chong ;

Zinkevich, Matvei ;

Aldinger, Fritz .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2006, 89 (12) :3751-3758

← 1 2 →