Micro-Raman scattering study of Ga1-xMnxAs

被引：8

作者：

Limmer, W ^{[1
]}

Glunk, M ^{[1
]}

Schoch, W ^{[1
]}

Köder, A ^{[1
]}

Kling, R ^{[1
]}

Sauer, R ^{[1
]}

Waag, A ^{[1
]}

机构：

[1] Univ Ulm, Abt Halbleiterphys, D-89069 Ulm, Germany

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期

关键词：

micro-Raman spectroscopy; GaMnAs; carrier density;

D O I：

10.1016/S1386-9477(02)00192-3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ga1-xMnxAs layers with Mn concentrations 0% less than or equal to x less than or equal to 2.7% grown on GaAs(001) substrates by low temperature molecular beam epitaxy were studied using micro-Raman spectroscopy, The layers were identified as p-type and an estimate of the hole densities was made by a full line shape analysis of the coupled plasmon-LO-phonon modes. The line width of the TO-phonon mode as a function of the Mn concentration was determined by spatially resolved measurements on cleaved (1 1 0) side faces. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：589 / 592

页数：4

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